The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Apr. 27, 2023
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Audrey Berthelot, Grenoble Cedex, FR;

Philippe Robert, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00801 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/056 (2013.01);
Abstract

The present description concerns a method of manufacturing a microelectromechanical device, including the following successive steps: providing an SOI structure comprising a first semiconductor layer on an insulating layer; forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer; transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer; and forming trenches vertically extending from the upper surface of the third semiconductor layer all the way to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.


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