The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Oct. 17, 2023
Applicant:

Foshan Nationstar Optoelectronics Co., Ltd., Foshan, CN;

Inventors:

Mingjun Zhu, Foshan, CN;

Haojie Guo, Foshan, CN;

Yurong Li, Foshan, CN;

Meiqin Lei, Foshan, CN;

Yan Chen, Foshan, CN;

Jundong Qiu, Foshan, CN;

Yinling Zheng, Foshan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/30 (2026.01); H10W 72/50 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/30 (2026.01); H10W 72/50 (2026.01);
Abstract

Provided is a method for manufacturing an optoelectronic device. The manufacturing method includes the following steps: In S, a monolithic circuit board including multiple device units is manufactured. In S, a chip is mounted on the first pad of the device unit, and the chip is electrically connected to the second pad so that a monolithic circuit board with the chip is obtained. In S, the monolithic circuit board with the chip is encapsulated to obtain a monolithic optoelectronic device. In S, the monolithic optoelectronic device is cut into individual optoelectronic devices. The method for manufacturing an optoelectronic device of the present disclosure can solve problems of substrate deformation and chips falling off and cracking during the manufacturing process of large-size and thin optoelectronic devices, thereby improving the yield rate.


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