The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Nov. 15, 2022
Applicants:

Denso Corporation, Kariya-city, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventors:

Masashi Uecha, Nisshin, JP;

Yuji Nagumo, Nisshin, JP;

Hiroki Tsuma, Nisshin, JP;

Teruaki Kumazawa, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10D 62/832 (2025.01); H10P 54/00 (2026.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10W 42/121 (2026.01); H10D 62/8325 (2025.01); H10P 54/00 (2026.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/107 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, an end region, and an active region. The end region is located above the semiconductor substrate, has a frame shape, and has been brought into contact with a blade in a scribing process. The active region is surrounded by the end region and is configured to serve as a path of a main current. The end region has a stress relaxation film on an outermost surface of the end region.


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Uecha, Masashi. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12696765). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696765

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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