The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Sep. 01, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Koichiro Nishizawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/425 (2026.01); H10W 20/035 (2026.01); H10W 20/0526 (2026.01);
Abstract

The present disclosure relates to a semiconductor device and a method for manufacturing the same, and an object thereof is to provide a semiconductor and a method for manufacturing the same, the semiconductor device not diffusing a material of a metal layer to a semiconductor substrate. A semiconductor device of the present disclosure includes a semiconductor substrate which is formed of GaAs, a first barrier layer which is formed of an alloy containing Ni on the semiconductor substrate, a second barrier layer which is formed of Co or an alloy containing Co on the first barrier layer, and a metal layer which is formed on the second barrier layer. A Ni concentration in the first barrier layer is 80 at % or lower.


Find Patent Forward Citations

Nishizawa, Koichiro. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12696752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696752

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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