The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Nov. 23, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Ruggero Anzalone, Viagrande, IT;
Francesco La Via, Catania, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical conductivity to generate a first stress in the second SiC layer, and introducing into the reaction chamber a precursor in the gaseous phase of a second dopant having a second electrical conductivity opposite to the first electrical conductivity, to generate a second stress in the second SiC layer that is opposite to, and balances, the first stress. The SiC wafer is thus without effects of warpage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile