The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Feb. 15, 2021
Applicant:
Plessey Semiconductors Ltd, Plymouth, GB;
Inventors:
Andrea Pinos, Plymouth, GB;
Simon Ashton, Plymouth, GB;
Xiang Yu, Plymouth, GB;
Jonathan Shipp, Plymouth, GB;
Assignee:
Plessey Semiconductors Ltd, Plymouth, GB;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/8312 (2025.01);
Abstract
A light emitting diode structure comprising a p-type region an n-type region; and a light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein at least one of the n-type region and the p-type region is at least partially formed in a via passing through the light emitting region, wherein the via defines the perimeter of a light emitting surface of at least one pixel.