The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Apr. 12, 2022
Applicant:

Fondazione Bruno Kessler, Povo, IT;

Inventors:

Alberto Gola, Trento, IT;

Fabio Acerbi, Trento, IT;

Giacomo Borghi, Trento, IT;

Gianluigi Casse, Trento, IT;

Alberto Mazzi, Trento, IT;

Giovanni Paternoster, Trento, IT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 77/00 (2025.01);
U.S. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 77/959 (2025.01);
Abstract

A diode radiation sensor having charge multiplication diodes and comprising a substrate with a front and a rear surface; a first layer of a semiconductor material doped with a first type of doping and arranged on the front surface of the substrate; a second layer of a semiconductor material doped with a second type of doping of electrically opposite sign to the first type and arranged to create a high electric field region between the first and the second layer; a third layer of a semiconductor material doped with a the second type of doping; a first isolation region interposed between a lateral edge of a charge multiplication diode and the first and the second layer of the semiconductor materials and extending into the substrate from the front surface to the third layer so as to create a working area electrically separated from the first and the second layer.


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