Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes first and second active patterns on first and second PMOS regions, two first source/drain patterns spaced apart along a first direction on the first active pattern and a first channel pattern including first semiconductor patterns between the two first source/drain patterns, and two second source/drain patterns spaced apart along the first direction on the second active pattern and a second channel pattern including second semiconductor patterns between the two second source/drain patterns. A width in a second direction of the each of the first semiconductor patterns is greater than a width of each of the second semiconductor patterns. Each of the first and second source/drain patterns includes semiconductor layers having different germanium concentrations. A number of the semiconductor layers of each of the two second source/drain patterns is greater than a number of the semiconductor layers of each of the two first source/drain patterns.