The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 30, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tatsuo Shimizu, Shinagawa, JP;
Yukio Nakabayashi, Yokohama, JP;
Toshihide Ito, Shibuya, JP;
Chiharu Ota, Kawasaki, JP;
Johji Nishio, Machida, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device of an embodiment includes performing first ion implantation of implanting aluminum (Al) into a silicon carbide layer in a first projected range and a first dose amount, performing second ion implantation of implanting carbon (C) into the silicon carbide layer in a second projected range and a second dose amount which is a dose amount equal to or more than 10 times the first dose amount, performing a first heat treatment of 1600° C. or more, performing an oxidation treatment of oxidizing the silicon carbide layer, performing an etching process of etching the silicon carbide layer in an atmosphere containing a hydrogen gas, forming a silicon oxide film on the silicon carbide layer, and forming a gate electrode on the silicon oxide film.