The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jul. 31, 2023
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Sung Ju Choi, Paju-si, KR;

Young Hyun Ko, Paju-si, KR;

Chan Yong Jeong, Paju-si, KR;

Jung Seok Seo, Paju-si, KR;

Jae Yoon Park, Paju-si, KR;

Seo Yeon Im, Paju-si, KR;

Jin Won Jung, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/6723 (2025.01); H10D 30/6745 (2025.01); H10K 59/1213 (2023.02);
Abstract

The disclosure provides a driving thin film transistor and a switching thin film transistor each using an oxide semiconductor pattern as an active layer thereof. The driving thin film transistor and the switching thin film transistor include light shielding patterns, respectively. Each light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding patterns including the semiconductor material layer, the driving thin film transistor and the switching thin film transistor achieve an increase in threshold voltage, thereby securing freedom of design.


Find Patent Forward Citations

Loading…