The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
May. 27, 2021
Boe Technology Group Co., Ltd., Beijing, CN;
Jie Huang, Beijing, CN;
Ce Ning, Beijing, CN;
Zhengliang Li, Beijing, CN;
Hehe Hu, Beijing, CN;
Jiayu He, Beijing, CN;
Nianqi Yao, Beijing, CN;
Kun Zhao, Beijing, CN;
Feng Qu, Beijing, CN;
Xiaochun Xu, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.