The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Nov. 08, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hong Sik Shin, Seoul, KR;

Jeong Yeon Seo, Seoul, KR;

Sung Woo Kang, Suwon-si, KR;

Dong Kwon Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/00 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/83 (2025.01); H10D 88/00 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H10D 30/503 (2025.01); H10D 30/506 (2025.01); H10D 30/6211 (2025.01); H10D 62/121 (2025.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/832 (2025.01); H10D 84/834 (2025.01); H10D 88/00 (2025.01);
Abstract

The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the gate structure, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern, wherein with respect to an upper surface of the active pattern, a height of an upper surface of the gate electrode is same as a height of an upper surface of the source/drain contact, and the source/drain contact comprises a lower source/drain contact and an upper source/drain contact on the lower source/drain contact, may be provided.


Find Patent Forward Citations

Shin, Hong. (2026). Semiconductor device and method for fabricating the same (U.S. Patent No. 12696476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696476

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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