The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Nov. 30, 2023
Graphenea Semiconductor S.l.u., Donostia, ES;
Elías Torres Alonso, Donostia, ES;
GRAPHENEA SEMICONDUCTOR S.L.U., Donostia—San Sebastián, ES;
Abstract
A method of fabricating a graphene-based solid-state device includes: disposing a graphene layer on a substrate; depositing a first layer of a sacrificial material on the graphene layer, the first layer made of a first oxide dielectric material; patterning the graphene layer by defining at least one channel region, by applying a lithographic process followed by etching; depositing a second layer of a sacrificial material on the stacked structure, the second layer made of a second oxide dielectric material different from the first. The selectivity to at least one etchant of the first oxide dielectric material is different from the selectivity to at least one etchant of the second. Also included is defining contact areas on which metal is deposited; etching away portions of the sacrificial material layers, defining hollow portions through which graphene areas are exposed; and in a single deposition stage, applying metal depositions on defined contact areas.