The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 28, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Fu Tang, Gilbert, AZ (US);
Eric James Shero, Phoenix, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H10D 1/68 (2025.01); H10P 14/692 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10D 1/68 (2025.01); C23C 16/405 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01); H10P 14/69392 (2026.01); H10P 14/69395 (2026.01); H10P 14/69397 (2026.01); H10P 50/283 (2026.01);
Abstract
Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include thermally annealing the dielectric layer with the capping layer directly thereon to form a high-k dielectric layer. Exemplary device structures are disclosure, such as metal-insulator-metal capacitor structures.