Three-dimensional semiconductor memory device and method of fabricating the same

Abstract

A semiconductor memory device includes a cell string and a first conductive pillar and a second conductive pillar connected to the cell string. The cell string includes plural memory cells, which are stacked on a substrate to be spaced apart from each other. The first conductive pillar is spaced apart from the second conductive pillar in a first direction. Each of the memory cells includes a channel layer that extends from the first conductive pillar to the second conductive pillar in the first direction, a ferroelectric layer on the channel layer, and an electrode on the ferroelectric layer. The channel layer comprises single crystalline silicon.