The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Nov. 10, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinseong Lee, Suwon-si, KR;

Jihye Kwon, Suwon-si, KR;

Jihun Kim, Suwon-si, KR;

Kyosuk Chae, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device includes a substrate including an active region. A gate structure is disposed in the substrate and extends to traverse the active region in a first horizontal direction. Bit line structures traverse the gate structure and extend in a second horizontal direction, intersecting the first horizontal direction. Fence structures are disposed between the bit line structures. The fence structures are spaced apart from each other in the second horizontal direction. A contact plug is disposed between the bit line structures and between the fence structures. The contact plug includes first and second side surfaces that are spaced apart from each other in the second horizontal direction and third and fourth side surfaces that are spaced apart from each other in the first horizontal direction. A doping concentration of the first side surface is higher than a doping concentration of the third side surface.


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