The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Dec. 10, 2019
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Xiang Lin, Beijing, CN;
Yanna Luo, Beijing, CN;
Zhanfeng Liu, Beijing, CN;
Abstract
The method for manufacturing a three-dimensional static random-access memory, including: manufacturing a first semiconductor structure including multiple MOS transistors and a first insulating layer thereon; bonding a first material layer to the first insulating layer to form a first substrate layer; manufacturing multiple first low-temperature MOS transistors at a low temperature on the first substrate layer, and forming a second insulating layer thereon to form a second semiconductor structure; bonding a second material layer to the second insulating layer to form a second substrate layer; manufacturing multiple second low-temperature MOS transistors at a low temperature on the second substrate layer, and forming a third insulating layer thereon to form a third semiconductor structure; and forming an interconnection layer which interconnects the first semiconductor structure, the second semiconductor structure and the third semiconductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile