The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Oct. 11, 2022
Applicant:

Minebea Power Semiconductor Device Inc., Ibaraki, JP;

Inventors:

Taiga Arai, Hitachi, JP;

Katsuaki Saito, Hitachi, JP;

Daisuke Kawase, Hitachi, JP;

Akira Mima, Tokyo, JP;

Takashi Wada, Hitachi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/08 (2006.01); H02M 1/32 (2007.01); H02M 7/00 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0828 (2013.01); H02M 1/32 (2013.01); H02M 7/003 (2013.01);
Abstract

To provide a technique enabling stable protection of a switching element at the time of short circuit by suppressing jumping of the voltage Vge between a gate terminal and a reference potential terminal at the time of occurrence of short circuit. A power semiconductor module having at least an upper arm, includes: a Zener diode connected between a gate terminal and a reference potential terminal and provided on the outside of a semiconductor chip of a switching element and provided on an insulating substrate; a casing which houses the insulating substrate; and a plurality of external electrodes provided to the casing and connected to the gate terminal and the reference potential terminal.


Find Patent Forward Citations

Loading…