The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jun. 23, 2025
Realtek Semiconductor Corp., Hsinchu, TW;
Chia-Liang (Leon) Lin, Fremont, CA (US);
REALTEK SEMICONDUCTOR CORP., Hsinchu, TW;
Abstract
An LC (inductor-capacitor) oscillator includes a first NMOS (n-channel metal oxide semiconductor) transistor, a first PMOS (p-channel metal oxide semiconductor) transistor, a second NMOS transistor, and a second PMOS transistor, wherein: the source of the first NMOS transistor is shorted to the source of the first PMOS transistor; the source of the second NMOS transistor is shorted to the source of the second PMOS transistor; the first NMOS transistor and the second NMOS transistor are cross coupled via a first gate inductor and a first drain inductor; the first and second PMOS transistors are cross coupled via a second gate inductor and a second drain inductor; the first NMOS transistor and the first PMOS transistor are coupled via a first gate capacitor and a first drain capacitor; and the second NMOS transistor and the second PMOS transistor are coupled via a second gate capacitor and a second drain capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile