The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Feb. 07, 2022
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Takeshi Ikuyama, Hitachinaka, JP;

Koichi Yahata, Hitachinaka, JP;

Assignee:

HITACHI ASTEMO, LTD., Hitachinaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 1/084 (2006.01); H02M 1/088 (2006.01); H02M 1/32 (2007.01); H02M 1/38 (2007.01); H02M 7/538 (2007.01); H02M 7/5387 (2007.01); H02M 7/5395 (2006.01);
U.S. Cl.
CPC ...
H02M 1/084 (2013.01); H02M 1/08 (2013.01); H02M 1/088 (2013.01); H02M 1/32 (2013.01); H02M 1/38 (2013.01); H02M 7/5387 (2013.01); H02M 7/5395 (2013.01);
Abstract

In a gate drive circuit, a first and second gate drives IC includes an INA terminal and an INB terminal to which a PWM signal is input, a gate output terminal that outputs a gate drive signal, and an OSFB terminal that outputs a feedback signal of the gate drive signal, and they are configured to output a gate drive signal in an ON state when the input of the INA terminal and the INB terminal is (ON, OFF). In the first gate drive IC, a first PWM signal is input to the INA terminal, and a second PWM signal is input to the INB terminal, and in the second gate drive IC, the second PWM signal is input to the INA terminal, and the first PWM signal is input to the INB terminal. The first diode includes a cathode side connected to the INB terminal of the second gate drive IC and an anode side connected to the OSFB terminal of the first gate drive IC. The second diode includes a cathode side connected to the INB terminal of the first gate drive IC and an anode side connected to the OSFB terminal of the second gate drive IC.


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