The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Aug. 31, 2022
Applicant:

Osaka Titanium Technologies Co., Ltd., Hyogo, JP;

Inventors:

Kohki Takeshita, Nishinomiya, JP;

Yusuke Kashitani, Nishinomiya, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/04 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); H01M 4/0421 (2013.01); H01M 10/0525 (2013.01);
Abstract

A method for producing a silicon-based active material precursor particle includes a laminated coating forming step for forming a laminated coating of a silicon-based active material on a substrate by repeating a vapor deposition step for depositing a silicon-based active material forming material on the substrate to form the silicon-based active material forming material having a multilayer structure. Following the laminated coating step, the method includes a scraping step for scraping off the laminated coating of the silicon-based active material from the substrate after repeating the vapor deposition step to obtain the silicon-based active material precursor particle having the multilayer structure as a part thereof. The substrate can be a rotating body having a horizontal axis for repeating the vapor deposition step or be one that is relatively movable with respect to the supply path of the silicon-based active material for repeating the vapor deposition step.


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