The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jul. 06, 2022
Applicant:

Oxford Instruments Nanotechnology Tools Limited, High Wycombe, GB;

Inventors:

Andrew Newton, Abingdon, GB;

Sungjin Cho, Abingdon, GB;

Matthew Loveday, Abingdon, GB;

Andrew Goodyear, Abingdon, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 74/00 (2026.01);
U.S. Cl.
CPC ...
H01J 37/3299 (2013.01); H10P 74/238 (2026.01); H01J 2237/334 (2013.01);
Abstract

A method of plasma etching or plasma deposition of a target layer of material in or onto a sample comprising a further layer of material, the method comprising: during a process of plasma etching or plasma deposition of the target layer of material: directing light of a first wavelength at the sample; measuring the intensity of light of the first wavelength reflected by the sample; directing light of a second wavelength at the sample; and measuring the intensity of light of the second wavelength reflected by the sample; determining, based on the intensities of light reflected by the sample, an endpoint of the process of plasma etching or plasma deposition of the target layer of material; and ending the process of plasma etching or plasma deposition of the target layer of material based on the determined endpoint.


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