The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

May. 13, 2024
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Noboru Shibata, Kawasaki Kanagawa, JP;

Hironori Uchikawa, Fujisawa Kanagawa, JP;

Taira Shibuya, Fujisawa Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/32 (2006.01); G11C 16/34 (2006.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/32 (2013.01); G11C 16/3459 (2013.01); H10B 69/00 (2023.02);
Abstract

A semiconductor memory includes a first memory cell configured to be set with one of different threshold voltage levels, a second memory cell configured to be set with one of the different threshold voltage levels, a first word line coupled to the first and second memory cells, a first bit line connected to the first memory cell, a second bit line connected to the second memory cell, a first sense amplifier connected to the first bit line, a second sense amplifier connected to the second bit line, a first switch provided between the first and second sense amplifiers, and a controller configured to read data of one of different bits based on a combination of the threshold voltage of the first memory cell and the threshold voltage of the second memory cell.


Find Patent Forward Citations

Shibata, Noboru. (2026). Semiconductor memory (U.S. Patent No. 12694934). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12694934

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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