The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Nov. 16, 2020
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Akihiro Shimada, Hamamatsu, JP;

Mitsuhito Mase, Hamamatsu, JP;

Jun Hiramitsu, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/486 (2020.01); G01S 7/4863 (2020.01); G01S 17/89 (2020.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01); H04N 25/532 (2023.01); H04N 25/705 (2023.01);
U.S. Cl.
CPC ...
G01S 7/4863 (2013.01); G01S 17/89 (2013.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01); H04N 25/532 (2023.01); H04N 25/705 (2023.01);
Abstract

In a light detection device, a control unit performs a first charge transfer process for transferring charge generated in a charge generation region to a charge storage region by applying an electric potential to a transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region and a first read process for reading an amount of charge stored in the charge storage region. In the first charge transfer process, the control unit applies an electric potential to an overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region.


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