The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
May. 01, 2024
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Hung-Hsin Yen, Hsinchu City, TW;
Chin-Hung Chen, Hsinchu City, TW;
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Abstract
A semiconductor structure includes a silicon carbide substrate, a silicon carbide buffer layer, and an epitaxial layer. The silicon carbide buffer layer is disposed on the silicon carbide substrate. The epitaxial layer is disposed on the silicon carbide buffer layer, in which a molar ratio of carbon to silicon atoms in the silicon carbide buffer layer gradually increases along a direction from the silicon carbide substrate to the epitaxial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile