The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jan. 13, 2025
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Masanobu Ikeda, Tokyo, JP;

Masumi Nishimura, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C23C 14/3457 (2013.01); C23C 14/50 (2013.01); C23C 14/54 (2013.01); H01J 37/32449 (2013.01); H01J 37/34 (2013.01); H01J 37/3411 (2013.01); H01J 37/3426 (2013.01); H01J 37/3464 (2013.01); H01J 37/3467 (2013.01); H01J 37/3476 (2013.01);
Abstract

A film formation apparatus includes a vacuum chamber, a substrate support portion and a target support portion provided in the vacuum chamber, a sputtering gas supply unit for supplying a sputtering gas to the vacuum chamber, a sputtering power supply, a first radical supply source connected to the vacuum chamber and configured to be capable of supplying at least one of nitrogen radicals generated from an Ngas and hydrogen radicals generated from an Hgas to the vacuum chamber, a second radical supply source connected to the vacuum chamber and configured to be capable of supplying SiH3 radicals to the vacuum chamber, and a control unit configured to control the sputtering gas supply unit, the sputtering power supply, the first radical supply source, and the second radical supply source.


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