The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jun. 07, 2022
Applicants:

Thyssenkrupp Steel Europe Ag, Duisburg, DE;

Thyssenkrupp Ag, Essen, DE;

Inventors:

Manuela Ruthenberg, Dortmund, DE;

Maria Koyer, Dortmund, DE;

Assignees:

ThyssenKrupp Steel Europe AG, Duisburg, DE;

thyssenkrupp AG, Essen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C21D 9/46 (2006.01); B32B 15/01 (2006.01); C21D 1/18 (2006.01); C21D 1/673 (2006.01); C21D 6/00 (2006.01); C22C 21/02 (2006.01); C22C 38/00 (2006.01); C22C 38/02 (2006.01); C22C 38/04 (2006.01); C22C 38/06 (2006.01); C22C 38/12 (2006.01); C22C 38/14 (2006.01); C23C 2/12 (2006.01); C23C 2/26 (2006.01); C23C 2/28 (2006.01); C23C 2/40 (2006.01);
U.S. Cl.
CPC ...
C21D 9/46 (2013.01); B32B 15/012 (2013.01); C21D 1/18 (2013.01); C21D 1/673 (2013.01); C21D 6/005 (2013.01); C21D 6/008 (2013.01); C22C 21/02 (2013.01); C22C 38/002 (2013.01); C22C 38/02 (2013.01); C22C 38/04 (2013.01); C22C 38/06 (2013.01); C22C 38/12 (2013.01); C22C 38/14 (2013.01); C23C 2/12 (2013.01); C23C 2/26 (2013.01); C23C 2/28 (2013.01); C23C 2/29 (2022.08); C23C 2/40 (2013.01);
Abstract

The present disclosure provides a steel component produced from a steel substrate coated with anticorrosion coating. The steel component comprises a steel substrate and, at least on one side of the steel substrate, an anticorrosion coating which comprises at least one first and one second silicon-rich layer (Si1, Si2) and also one first and one second low-silicon layer (A, B). A quotient X formed from a thickness (dB) of the second low-silicon layer (B) in μm by a thickness (dA) of the first low-silicon layer (A) in μm is at least 0.4 and at most 1.1.


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