The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 16, 2019
Applicant:
Wacker Chemie Ag, Munich, DE;
Inventors:
Jürgen Wolff, Radeberg, DE;
Markus Wenzeis, Wurmannsquick, DE;
Assignee:
Wacker Chemie AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); B01J 8/42 (2006.01); B01J 19/00 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); B01J 8/42 (2013.01); B01J 19/0013 (2013.01); B01J 2219/00162 (2013.01); B01J 2219/00164 (2013.01); B01J 2219/00186 (2013.01);
Abstract
A process for producing polycrystalline silicon and a gas phase deposition chamber for the same. The process includes introducing a reaction gas containing an amount of silane and/or an amount of at least one halosilane as well as an amount of hydrogen into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated support body upon which by deposition silicon is deposited to form the polycrystalline silicon. For the detection of dust depositions, at least one measuring apparatus is used to determine the amount of haze inside the reaction space during deposition.