The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Sep. 17, 2021
Oxford Instruments Nanotechnology Tools Limited, High Wycombe, GB;
Samantha Mazzamuto, Abingdon, GB;
Andrew Newton, Abingdon, GB;
Matthew Loveday, Abingdon, GB;
Michael Cooke, Abingdon, GB;
Oxford Instruments Nanotechnology Tools Limited, High Wycombe, GB;
Abstract
A method of preparing a silicon carbide wafer for subsequent epitaxial growth thereon is disclosed. The method comprises (a) placing the silicon carbide wafer onto a support table in a plasma processing chamber such that the surface of the silicon carbide wafer distal to the support table is unmasked; (b) establishing a flow of an etch gas mixture into the plasma processing chamber, wherein the etch gas mixture comprises molecular hydrogen, H; and (c) generating a plasma from the etch gas mixture within the plasma processing chamber and using the plasma to etch the unmasked surface of the wafer so as to reduce the roughness of the unmasked surface.