The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Dec. 20, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hajun Sung, Suwon-si, KR;
Youngjae Kang, Suwon-si, KR;
Changyup Park, Hwaseong-si, KR;
Kiyeon Yang, Suwon-si, KR;
Wooyoung Yang, Suwon-si, KR;
Changseung Lee, Suwon-si, KR;
Minwoo Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd, Gyeonggi-do, KR;
Abstract
Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.