The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Sep. 10, 2024
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kenji Fukuda, Seoul, KR;

Tadaaki Oikawa, Seoul, KR;

Kazuya Sawada, Seoul, KR;

Soichi Oikawa, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H10B 61/10 (2023.02); H10B 61/20 (2023.02); H10N 50/85 (2023.02); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer provided on an opposite side to a side on which the first nonmagnetic layer is provided with respect to the second ferromagnetic layer. At least one of the first nonmagnetic layer and the second nonmagnetic layer is an oxide layer including magnesium (Mg) and a groupelement. The groupelement includes at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), and rutherfordium (Rf).


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