The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Nov. 28, 2022
Playnitride Display Co., Ltd., MiaoLi County, TW;
Yu-Hsuan Hsiao, MiaoLi County, TW;
Teng-Hsien Lai, MiaoLi County, TW;
Tzu-Yang Lin, MiaoLi County, TW;
PlayNitride Display Co., Ltd., MiaoLi County, TW;
Abstract
A micro semiconductor device includes an epitaxial structure and an optical layer. The optical layer is disposed on the epitaxial structure. The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer. A refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer. A thickness of the third film layer is greater than a thickness of the first film layer and s thickness of the second film layer. A reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile