The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Jul. 06, 2023
Bolb Inc., Livermore, CA (US);
Jianping Zhang, Arcadia, CA (US);
Ying Gao, Beijing, CN;
Ling Zhou, Dublin, CA (US);
Bin Zhang, Livermore, CA (US);
BOLB Inc., Livermore, CA (US);
Abstract
A light emitting diode has a substrate, a group III nitride layer over the substrate for electron supply and n-type ohmic contact formation and a light-emitting multiple-quantum well active region over the group III nitride layer. An electron blocking layer is over the light-emitting multiple-quantum well active region, the electron blocking layer has a periodic structure made of a AlGaN barrier layer and a AlGaN well layer and a laminate comprising an AlGaN layer of thickness b1, an Al-composition downgraded AlGaN layer of thickness b, and an AlGaN layer of thickness b3, where b is greater than each of b1 and b3. A p-contact layer is positioned above the electron blocking layer and a p-contact pad is positioned above the p-contact layer.