The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Apr. 24, 2024
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Jaume Roig-Guitart, Oudenaarde, BE;

Rishi Krishna Balasubramanian Saraswathy, Stochholm, SE;

Martin Domeij, Sollentuna, SE;

Kyeongseok Park, Bucheon, KR;

Soohyun Kang, Bucheon, KR;

Doojin Choi, Gimpo, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/122 (2006.01); H02H 7/20 (2006.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/811 (2025.01); H02H 7/122 (2013.01); H02H 7/205 (2013.01);
Abstract

A switching device includes a semiconductor power switch and a temperature sensitive element (TSE). The power switch has a normal operating temperature range and an active area. The TSE is connected to the power switch proximate the active area, and configured such that conduction of an electric current through the TSE is negligible when a temperature of the TSE is within the normal operating temperature range. Conduction increases when a temperature of the TSE is above the normal operating temperature range. This continues to a level sufficient for turning off the semiconductor power switch, e.g., by shorting the gate and source of the power switch. The TSE thus protects the power switch from thermal damage during an overcurrent event. An inverter circuit includes a direct current link capacitor and multiple switching pairs of the switching devices.


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