The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 06, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 88/00 (2026.01); H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 88/00 (2025.01); H10D 88/01 (2025.01); H10W 72/00 (2026.01);
Abstract
Provided is a semiconductor device that includes: at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1layer; and at least one back side power delivery network (BSPDN) structure in a 2layer below the 1layer, wherein the at least one BSPDN structure is configured to connect the at least one field-effect transistor to a voltage source.
Hong, Byounghak. (2026). Pj junction device structure in semiconductor device with back side power delivery network (bspdn) structure (U.S. Patent No. 12690264). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12690264
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile