The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Mar. 31, 2023
Applicant:
Alpha and Omega Semiconductor International Lp, Toronto, CA;
Inventors:
Zhibo Guo, San Jose, CA (US);
Karthik Padmanabhan, Palo Alto, CA (US);
Lingpeng Guan, San Jose, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/60 (2025.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/617 (2025.01); H10D 8/422 (2025.01); H10D 12/441 (2025.01); H10D 12/481 (2025.01); H10D 64/112 (2025.01); H10D 64/117 (2025.01);
Abstract
A reverse conducting IGBT comprising a substrate having a top side and a back side opposite the top side, one or more IGBT top side cells, one or more diode top side cells including, an IGBT back side collector region is formed in the back side of the substrate underneath the one or more IGBT top side cells, and a boundary area formed in the back side of the substrate underneath a portion of the one or more diode top side cells.