logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12690245 B1

PDFFull Text
Date of Patent:
Jul. 21, 2026

Filed:

May. 18, 2023

Integrated circuit device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Juri Lee, Suwon-si, KR;

Taegon Kim, Suwon-si, KR;

Sun-Ryung Oh, Suwon-si, KR;

Sihyung Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Leonardo Andujar

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/853 (2025.01);
Abstract

An integrated circuit (IC) device is provided. The IC device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second portion being apart from the channel region; and a second gate dielectric film including a third portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate.

Find Patent Forward Citations

Lee, Juri. (2026). Integrated circuit device (U.S. Patent No. 12690245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12690245

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…