The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 24, 2023
Applicant:
Db Hitek Co., Ltd., Seoul, KR;
Inventor:
Hong Sik Shin, Bucheon-si, KR;
Assignee:
DB HITEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/83 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/83 (2025.01); H10D 62/116 (2025.01); H10D 62/149 (2025.01); H10D 62/343 (2025.01); H10D 62/357 (2025.01);
Abstract
A semiconductor device includes a channel region formed on a substrate, a source region formed on the channel region, a drain region formed on the channel region, a gate region formed on the channel region between the source region and the drain region, a source contact region formed on a portion of the source region, and a resistance region formed on another portion of the source region. The source contact region and the resistance region are electrically connected in parallel with a source terminal.