The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 02, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Jong Min Kim, Seoul, KR;
Geum Ho Ahn, Seoul, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0281 (2025.01); H10D 30/6891 (2025.01); H10D 64/112 (2025.01);
Abstract
Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same enabling more effective integration through improvement of breakdown voltage (BV) characteristics during device turn-on and/or turn-off and consequent improvement of specific on-resistance (Rsp) characteristics by forming or including a floating gate and/or a connection structure on a substrate, between a gate electrode and a drain.