The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Aug. 17, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Yosuke Kajiwara, Yokohama, JP;
Miyoko Shimada, Yokohama, JP;
Kento Minamikawa, Yokohama, JP;
Hiroshi Ono, Tokyo, JP;
Daimotsu Kato, Kawasaki, JP;
Masahiko Kuraguchi, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes AlGaN (0≤x1<1). The second semiconductor region includes AlGaN (0<x2<1, x1<x2). A first nitride portion thickness along a second direction of the first nitride portion is thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion. A first semiconductor portion thickness along the second direction of the first semiconductor portion is thicker than the first nitride portion thickness.