The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 29, 2024
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kazutoshi Nakamura, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device of embodiments includes a transistor region and a diode region. The transistor region includes: a first conductive type first semiconductor region, a second conductive type second semiconductor region, a first conductive type third semiconductor region in this order in a semiconductor layer; a second conductive type fourth semiconductor region and a first conductive type fifth semiconductor region on the third semiconductor region and arranged alternately in a first direction; a first conductive type sixth semiconductor region between the third and the fourth semiconductor region a first trench spaced from the sixth semiconductor region; a gate electrode in the first trench; a first electrode having a first portion, a bottom surface of the first portion being in contact with the third semiconductor region and side surfaces of the first portion being in contact with the fourth, the fifth, and the sixth semiconductor regions; and a second electrode.