The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 09, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Tomohito Kudo, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor substrate () includes a main region () and a sense region () having a smaller operation region area than that of the main region (). An IGBT is formed in the main region (). A MOSFET is formed as a sense device in the sense region () and has a gate electrode () connected to a gate electrode () of the IGBT. A front surface electrode () is formed on a front surface of the semiconductor substrate () in the main region (). A rear surface electrode () is formed on a rear surface of the semiconductor substrate () in the main region () and the sense region (). A current detection electrode () is formed on the front surface in the sense region () and separated from the front surface electrode ().