The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Jan. 19, 2023
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Tatsuro Uchida, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/75 (2025.01); H10D 8/01 (2025.01);
U.S. Cl.
CPC ...
H10D 8/755 (2025.01); H10D 8/053 (2025.01);
Abstract
A resonant tunneling diode includes a substrate, and a mesa structure including a compound semiconductor layer including a heterojunction comprising a multi-barrier structure disposed on the substrate, and an electrode disposed on the upper surface of the compound semiconductor layer. An outer edge portion of the compound semiconductor layer is a first region including crystal defects, and the first region and the electrode are set apart from each other.