The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Sep. 22, 2021
Sun Yat-sen University, Guangdong, CN;
Yang Liu, Guangdong, CN;
Yuhao Zhou, Guangdong, CN;
SUN YAT-SEN UNIVERSITY, Guangdong, CN;
Abstract
The invention relates to a GaN-based trench metal oxide Schottky barrier diode and a preparation method therefor. The device structure from bottom to top includes: an ohmic contact metal layer covering a substrate i.e., cathode; a GaN self-supporting substrate; an n-type lightly doped epitaxial layer; a p-type high-concentration GaN layer arranged in parallel; a dielectric layer in the trench; a metal layer convering the upper surface of the device i.e., the anode. The p-type high-concentration GaN layer with high carrier concentration can be obtained by using a selective area epitaxial method to form the p-type high-concentration GaN layer. Then the dielectric layer is deposited, and a contact hole is provided on the dielectric layer, subsequently the anode metal is connected to the p-type high-concentration GaN layer through the contact hole, forming the ohmic contact.