The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Dec. 29, 2023
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

Lifang Xu, Boise, ID (US);

John D. Hopkins, Meridian, ID (US);

Roger W. Lindsay, Boise, ID (US);

Shuangqiang Luo, Boise, ID (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01); H10W 20/00 (2026.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/41 (2023.02); H10W 20/056 (2026.01); H10W 20/0698 (2026.01); H10W 20/083 (2026.01); H10W 20/089 (2026.01); H10W 20/096 (2026.01); H10W 20/20 (2026.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A method of forming a microelectronic device comprises forming isolated nitride structures on steps of stair step structures comprising stacked tiers comprising alternating levels of a first insulative material and a second insulative material, forming a photoresist material over some of the stair step structures, and replacing the isolated nitride structures and the second insulative material with an electrically conductive material to respectively form conductive pad structures and electrically conductive lines. Related microelectronic devices and electronic devices are also disclosed.


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