The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Jan. 03, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Juho Lee, Suwon-si, KR;
Seongjae Byeon, Suwon-si, KR;
Wonsok Lee, Suwon-si, KR;
Jeon Il Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device includes a bit line on a substrate and extending in a first direction parallel to a top surface of the substrate, a channel pattern connected to a top surface of the bit line and extending in a second direction perpendicular to the top surface of the substrate, a first drain pattern on the channel pattern, a first word line adjacent to a lower portion of the first drain pattern and the channel pattern, and a gate insulating layer between the lower portion of the first drain pattern and the first word line and between the channel pattern and the first word line. An energy band gap of a first material of the first drain pattern is greater than an energy band gap of a second material of the channel pattern.