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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12690130 B1

PDFFull Text
Date of Patent:
Jul. 21, 2026

Filed:

Feb. 27, 2024

Semiconductor storage device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Kiyokazu Ishizaki, Tokyo, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

Tuan T Dinh

Int. Cl.
CPC ...
H05K 1/11 (2006.01); H05K 1/181 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01); H10W 90/24 (2026.01);
U.S. Cl.
CPC ...
H05K 1/117 (2013.01); H05K 1/111 (2013.01); H05K 1/181 (2013.01); H10W 74/117 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01); H05K 2201/0939 (2013.01); H05K 2201/09409 (2013.01); H05K 2201/10734 (2013.01); H05K 2201/10984 (2013.01); H10W 90/24 (2026.01); H10W 90/291 (2026.01); H10W 90/752 (2026.01);
Abstract

A semiconductor storage device includes a wiring pattern on an insulating base material; an insulating film covering partially the wiring pattern; and an electronic component. The wiring pattern includes a first pad having an edge in an arc shape, and a first wire. The insulating film has a first opening larger than the first pad. The first wire has a first portion, a second portion, and a third portion. The first portion is connected to the first pad inside the first opening extends in a first direction. The second portion is connected to the first pad inside the first opening and extends in a second direction. The third portion is connected to the first portion and the second portion. The first wire is connected with the first pad in an angular range of not more than 90 degrees in a circumferential direction of the first pad.

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Quick Actions:

Ishizaki, Kiyokazu. (2026). Semiconductor storage device (U.S. Patent No. 12690130). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12690130

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