The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Apr. 19, 2023
Applicant:

Semtech Corporation, Camarillo, CA (US);

Inventors:

Behzad Farzaneh, London, GB;

Matthew George Hagman, Gatineau, CA;

Christopher John Born, Bristol, GB;

Assignee:

Semtech Corporation, Camarillo, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/32 (2006.01); H04B 10/60 (2013.01);
U.S. Cl.
CPC ...
H03F 3/4508 (2013.01); H03F 1/32 (2013.01); H04B 10/60 (2013.01);
Abstract

This application relates to transimpedance amplifiers (TIAs), in particular to TIAs with wideband feedback. The TIA has an input stage, for receiving an input current and outputting a corresponding output voltage, with a first transistor configured as an input transistor in a first circuit branch. A reference controller is configured to provide a reference voltage with a value equal to a DC value of the output voltage and a voltage regulator is configured to receive a supply voltage and generate a regulated voltage with a voltage offset to the reference voltage, such that the voltage offset does not substantially vary with variation in at least one of the supply voltage, temperature and process variations. The regulated voltage is supplied as a supply voltage to the input stage. The TIA also includes control circuitry for controlling an effective transconductance of the first transistor to a defined value.


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