The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Mar. 10, 2022
Applicant:

Mitsubishi Electric Corporation;

Inventors:

Shota Morisaki, Tokyo, JP;

Takayoshi Miki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 1/32 (2007.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/327 (2021.05); H02M 7/5387 (2013.01);
Abstract

A controller of a gate drive circuitry includes: a Vsd table indicating a first voltage, which is a voltage between a drain terminal and a source terminal, in a correspondence between a first current and a first junction temperature; and a Vsd table indicating the first voltage in a correspondence between a second current and a second junction temperature. The first and second currents are currents flowing when a semiconductor switching element is in an asynchronous rectification state and a synchronous rectification state, respectively. The first and second junction temperatures are junction temperatures when the first and second currents flow through the semiconductor switching element, respectively. The controller uniquely specifies a junction temperature of the semiconductor switching element from the Vsd table by using two detection values of the first voltage detected individually in the asynchronous rectification state and the synchronous rectification state.


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