The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

May. 24, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyeong Seok, Seoul, KR;

Younggul Song, Hwaseong-si, KR;

Eunchu Oh, Hwaseong-si, KR;

Byungchul Jang, Suwon-si, KR;

Joonsung Lim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 29/04 (2006.01); G11C 29/52 (2006.01); H10B 53/20 (2023.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G06F 3/061 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/16 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 2029/0411 (2013.01); G11C 29/52 (2013.01); G11C 2211/5641 (2013.01); H10B 53/20 (2023.02);
Abstract

In a method of operating one or more nonvolatile memory devices including one or more memory blocks, each memory block includes a plurality of memory cells and a plurality of pages arranged in a vertical direction. Pages arranged in a first direction of a channel hole are set as first to N-th pages. A size of the channel hole increases in the first direction and decreases in the second direction. Pages arranged in a second direction of the channel hole are set as (N+1)-th to 2N-th pages. First to N-th page pairs are set such that a K-th page among the first to the N-th pages and an (N+K)-th page among the (N+1)-th to 2N-th pages form one page pair. Parity regions of two pages included in at least one page pair are shared by the two pages included in the at least one page pair.


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